The advantages of the latest SiC devices in power modules compared to legacy Si IGBTs for modern power electronics applications. October 16th, 2019 - By: Wolfspeed, a Cree Company With the shift ...
The stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by 1-fold, SiC power modules allow for ...
For the electrification of cars to assist in achieving a decarbonized society, the development of more efficient, compact, and lightweight electric powertrain systems must continue to progress. And ...
TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
Manufacturers of silicon carbide (SiC) and gallium nitride (GaN) power ICs leveraged the APEC 2024 conference to highlight their latest developments in wide-bandgap semiconductors. These devices offer ...
Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. SiC MOSFETs are designed and essentially ...
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