Progress in PV technology is more often characterized by slow, steady progress than dramatic breakthroughs, and years and even decades go by where the same basic technology is tweaked but not ...
The advantages of the latest SiC devices in power modules compared to legacy Si IGBTs for modern power electronics applications. October 16th, 2019 - By: Wolfspeed, a Cree Company With the shift ...
The stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by 1-fold, SiC power modules allow for ...
TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. SiC MOSFETs are designed and essentially ...
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